ماژول Infineon IGBT BSM300GA120DN2FS-E3265

توضیحات محصول

ماژول Infineon IGBT BSM300GA120DN2FS-E3265

Collector-emitter voltage VCE 1200 V
Collector-gate voltage
RGE = 20 kW
VCGR
1200
Gate-emitter voltage VGE ± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC
300
430
A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
ICpuls
600
860
Power dissipation per IGBT
TC = 25 °C
Ptot
2500
W
Chip temperature Tj + 150 °C
Storage temperature Tstg -40 ... + 125
Thermal resistance, chip case RthJC £ 0.05 K/W
Diode thermal resistance, chip case RthJCD £ 0.125
Insulation test voltage, t = 1min. Vis 2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56